Specifications

• Series
  -
• Package
  Tray
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  1200 V
• Current - Continuous Drain (Id) @ 25°C
  400A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  -
• Rds On (Max) @ Id, Vgs
  -
• Vgs(th) (Max) @ Id
  5.6V @ 106.8mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  +22V, -4V
• Input Capacitance (Ciss) (Max) @ Vds
  17000 pF @ 10 V
• FET Feature
  -
• Power Dissipation (Max)
  1570W (Tc)
• Operating Temperature
  175°C (TJ)
• Mounting Type
  Chassis Mount
• Supplier Device Package
  Module
• Package / Case
  Module