EMF17T2R

EMF17T2R

Manufacturer

ROHM Semiconductor

Product Category

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Description

TRANS NPN PREBIAS/PNP 0.15W EMT6

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • Transistor Type
    1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max)
    100mA, 150mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Resistor - Base (R1)
    2.2kOhms
  • Resistor - Emitter Base (R2)
    2.2kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 20mA, 5V / 180 @ 1mA, 6V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    250MHz, 140MHz
  • Power - Max
    150mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    EMT6

EMF17T2R Request a Quote

In Stock 103698
Quantity:
Unit Price (Reference Price):
0.09731
Target price:
Total:0.09731

Datasheet