QS8J11TCR

QS8J11TCR

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2P-CH 12V 3.5A TSMT8

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • FET Type
    2 P-Channel (Dual)
  • FET Feature
    Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss)
    12V
  • Current - Continuous Drain (Id) @ 25°C
    3.5A
  • Rds On (Max) @ Id, Vgs
    43mOhm @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 6V
  • Power - Max
    550mW
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Supplier Device Package
    TSMT8

QS8J11TCR Request a Quote

In Stock 34149
Quantity:
Unit Price (Reference Price):
0.60000
Target price:
Total:0.60000

Datasheet