RGTH50TS65DGC11

RGTH50TS65DGC11

Manufacturer

ROHM Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT 650V 50A 174W TO-247N

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    50 A
  • Current - Collector Pulsed (Icm)
    100 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 25A
  • Power - Max
    174 W
  • Switching Energy
    -
  • Input Type
    Standard
  • Gate Charge
    49 nC
  • Td (on/off) @ 25°C
    27ns/94ns
  • Test Condition
    400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    58 ns
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247N

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In Stock 9922
Quantity:
Unit Price (Reference Price):
3.34000
Target price:
Total:3.34000

Datasheet