RGW00TS65GC11

RGW00TS65GC11

Manufacturer

ROHM Semiconductor

Product Category

Transistors - IGBTs - Single

Description

650V 50A FIELD STOP TRENCH IGBT

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    96 A
  • Current - Collector Pulsed (Icm)
    200 A
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 50A
  • Power - Max
    254 W
  • Switching Energy
    1.18mJ (on), 960µJ (off)
  • Input Type
    Standard
  • Gate Charge
    141 nC
  • Td (on/off) @ 25°C
    52ns/180ns
  • Test Condition
    400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    -
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247N

RGW00TS65GC11 Request a Quote

In Stock 10825
Quantity:
Unit Price (Reference Price):
5.06000
Target price:
Total:5.06000

Datasheet