RQ3G150GNTB

RQ3G150GNTB

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CHANNEL 40V 39A 8HSMT

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    40 V
  • Current - Continuous Drain (Id) @ 25°C
    39A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    7.2mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    11.6 nC @ 4.5 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1450 pF @ 20 V
  • FET Feature
    -
  • Power Dissipation (Max)
    20W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-HSMT (3.2x3)
  • Package / Case
    8-PowerVDFN

RQ3G150GNTB Request a Quote

In Stock 17905
Quantity:
Unit Price (Reference Price):
1.17000
Target price:
Total:1.17000

Datasheet