RQ3L090GNTB

RQ3L090GNTB

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 60V 9A/30A 8HSMT

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    60 V
  • Current - Continuous Drain (Id) @ 25°C
    9A (Ta), 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    13.9mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id
    2.7V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs
    24.5 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1260 pF @ 30 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2W (Ta)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-HSMT (3.2x3)
  • Package / Case
    8-PowerVDFN

RQ3L090GNTB Request a Quote

In Stock 15857
Quantity:
Unit Price (Reference Price):
1.34000
Target price:
Total:1.34000