RYE002N05TCL

RYE002N05TCL

Manufacturer

ROHM Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 50V 200MA EMT3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Not For New Designs
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    50 V
  • Current - Continuous Drain (Id) @ 25°C
    200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    0.9V, 4.5V
  • Rds On (Max) @ Id, Vgs
    2.2Ohm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id
    800mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    26 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    150mW (Ta)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    EMT3
  • Package / Case
    SC-75, SOT-416

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In Stock 46335
Quantity:
Unit Price (Reference Price):
0.22000
Target price:
Total:0.22000

Datasheet