Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  1200 V
• Current - Continuous Drain (Id) @ 25°C
  10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  18V
• Rds On (Max) @ Id, Vgs
  585mOhm @ 3A, 18V
• Vgs(th) (Max) @ Id
  4V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs
  27 nC @ 18 V
• Vgs (Max)
  +22V, -6V
• Input Capacitance (Ciss) (Max) @ Vds
  463 pF @ 800 V
• FET Feature
  -
• Power Dissipation (Max)
  85W (Tc)
• Operating Temperature
  175°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-247
• Package / Case
  TO-247-3