Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  650 V
• Current - Continuous Drain (Id) @ 25°C
  39A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  18V
• Rds On (Max) @ Id, Vgs
  78mOhm @ 13A, 18V
• Vgs(th) (Max) @ Id
  5.6V @ 6.67mA
• Gate Charge (Qg) (Max) @ Vgs
  58 nC @ 18 V
• Vgs (Max)
  +22V, -4V
• Input Capacitance (Ciss) (Max) @ Vds
  852 pF @ 500 V
• FET Feature
  -
• Power Dissipation (Max)
  165W (Tc)
• Operating Temperature
  175°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-247N
• Package / Case
  TO-247-3