Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  650 V
• Current - Continuous Drain (Id) @ 25°C
  45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  18V, 20V
• Rds On (Max) @ Id, Vgs
  72mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id
  3.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  73 nC @ 20 V
• Vgs (Max)
  +20V, -5V
• Input Capacitance (Ciss) (Max) @ Vds
  73000 pF @ 400 V
• FET Feature
  -
• Power Dissipation (Max)
  208W (Tc)
• Operating Temperature
  -55°C ~ 175°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-247 Long Leads
• Package / Case
  TO-247-3