Specifications

• Series
  SuperMESH3™
• Package
  Tube
• Part Status
  Not For New Designs
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  1050 V
• Current - Continuous Drain (Id) @ 25°C
  1.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  11Ohm @ 600mA, 10V
• Vgs(th) (Max) @ Id
  4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs
  13 nC @ 10 V
• Vgs (Max)
  ±30V
• Input Capacitance (Ciss) (Max) @ Vds
  180 pF @ 100 V
• FET Feature
  -
• Power Dissipation (Max)
  20W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  ISOWATT-218FX
• Package / Case
  ISOWATT218FX