STGB4M65DF2

STGB4M65DF2

Manufacturer

STMicroelectronics

Product Category

Transistors - IGBTs - Single

Description

TRENCH GATE FIELD-STOP IGBT, M S

Specifications

  • Series
    M
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    8 A
  • Current - Collector Pulsed (Icm)
    16 A
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Power - Max
    68 W
  • Switching Energy
    40µJ (on), 136µJ (off)
  • Input Type
    Standard
  • Gate Charge
    15.2 nC
  • Td (on/off) @ 25°C
    12ns/86ns
  • Test Condition
    400V, 4A, 47Ohm, 15V
  • Reverse Recovery Time (trr)
    133 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK

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In Stock 40209
Quantity:
Unit Price (Reference Price):
0.50750
Target price:
Total:0.50750

Datasheet