STGP6M65DF2

STGP6M65DF2

Manufacturer

STMicroelectronics

Product Category

Transistors - IGBTs - Single

Description

TRENCH GATE FIELD-STOP IGBT M SE

Specifications

  • Series
    M
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    12 A
  • Current - Collector Pulsed (Icm)
    24 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 6A
  • Power - Max
    88 W
  • Switching Energy
    40µJ (on), 136µJ (off)
  • Input Type
    Standard
  • Gate Charge
    21.2 nC
  • Td (on/off) @ 25°C
    12ns/86ns
  • Test Condition
    400V, 6A, 22Ohm, 15V
  • Reverse Recovery Time (trr)
    140 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220

STGP6M65DF2 Request a Quote

In Stock 18346
Quantity:
Unit Price (Reference Price):
1.15000
Target price:
Total:1.15000

Datasheet