STGWA75H65DFB2

STGWA75H65DFB2

Manufacturer

STMicroelectronics

Product Category

Transistors - IGBTs - Single

Description

TRENCH GATE FIELD-STOP, 650 V, 7

Specifications

  • Series
    HB2
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    115 A
  • Current - Collector Pulsed (Icm)
    225 A
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 75A
  • Power - Max
    357 W
  • Switching Energy
    1.428mJ (on), 1.05mJ (off)
  • Input Type
    Standard
  • Gate Charge
    207 nC
  • Td (on/off) @ 25°C
    28ns/100ns
  • Test Condition
    400V, 75A, 2.2Ohm, 15V
  • Reverse Recovery Time (trr)
    88 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247 Long Leads

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In Stock 7436
Quantity:
Unit Price (Reference Price):
4.63000
Target price:
Total:4.63000