STP11N60DM2

STP11N60DM2

Manufacturer

STMicroelectronics

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 10A TO220

Specifications

  • Series
    MDmesh™ DM2
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    420mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    16.5 nC @ 10 V
  • Vgs (Max)
    ±25V
  • Input Capacitance (Ciss) (Max) @ Vds
    614 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    110W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220
  • Package / Case
    TO-220-3

STP11N60DM2 Request a Quote

In Stock 12950
Quantity:
Unit Price (Reference Price):
1.67000
Target price:
Total:1.67000

Datasheet