Specifications

• Series
  -
• Package
  Tube
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  60 V
• Current - Continuous Drain (Id) @ 25°C
  20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  4.5V, 10V
• Rds On (Max) @ Id, Vgs
  48mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id
  2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs
  22.4 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1250 pF @ 30 V
• FET Feature
  -
• Power Dissipation (Max)
  66W (Tc)
• Operating Temperature
  -50°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-251 (IPAK)
• Package / Case
  TO-251-3 Stub Leads, IPak