CSD16327Q3T

CSD16327Q3T

Manufacturer

Texas Instruments

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 25V 60A 8VSON

Specifications

  • Series
    NexFET™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    25 V
  • Current - Continuous Drain (Id) @ 25°C
    60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    3V, 8V
  • Rds On (Max) @ Id, Vgs
    4mOhm @ 24A, 8V
  • Vgs(th) (Max) @ Id
    1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.4 nC @ 4.5 V
  • Vgs (Max)
    +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    1300 pF @ 12.5 V
  • FET Feature
    -
  • Power Dissipation (Max)
    74W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-VSON-CLIP (3.3x3.3)
  • Package / Case
    8-PowerTDFN

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In Stock 15846
Quantity:
Unit Price (Reference Price):
1.33000
Target price:
Total:1.33000