CSD85312Q3E

CSD85312Q3E

Manufacturer

Texas Instruments

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 20V 39A 8VSON

Specifications

  • Series
    NexFET™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Common Source
  • FET Feature
    Logic Level Gate, 5V Drive
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    39A
  • Rds On (Max) @ Id, Vgs
    12.4mOhm @ 10A, 8V
  • Vgs(th) (Max) @ Id
    1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    15.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    2390pF @ 10V
  • Power - Max
    2.5W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    8-VSON (3.3x3.3)

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In Stock 21020
Quantity:
Unit Price (Reference Price):
0.99000
Target price:
Total:0.99000