HN1A01FE-Y,LF

HN1A01FE-Y,LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

TRANS 2PNP 50V 0.15A ES6

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    2 PNP (Dual)
  • Current - Collector (Ic) (Max)
    150mA
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    120 @ 2mA, 6V
  • Power - Max
    100mW
  • Frequency - Transition
    80MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    ES6

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In Stock 30365
Quantity:
Unit Price (Reference Price):
0.34000
Target price:
Total:0.34000

Datasheet

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