HN1C03FU-B,LF

HN1C03FU-B,LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Arrays

Description

NPN + NPN IND. TRANSISTOR VCEO20

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    2 NPN (Dual)
  • Current - Collector (Ic) (Max)
    300mA
  • Voltage - Collector Emitter Breakdown (Max)
    20V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 3mA, 30A
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    350 @ 4mA, 2V
  • Power - Max
    200mW
  • Frequency - Transition
    30MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    US6

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In Stock 26572
Quantity:
Unit Price (Reference Price):
0.39000
Target price:
Total:0.39000