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MT3S111P(TE12L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Product Category
Transistors - Bipolar (BJT) - RF
Description
RF TRANS NPN 6V 8GHZ PW-MINI
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
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Part StatusActive
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Transistor TypeNPN
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Voltage - Collector Emitter Breakdown (Max)6V
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Frequency - Transition8GHz
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Noise Figure (dB Typ @ f)1.25dB @ 1GHz
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Gain10.5dB
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Power - Max1W
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DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
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Current - Collector (Ic) (Max)100mA
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Operating Temperature150°C (TJ)
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Mounting TypeSurface Mount
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Package / CaseTO-243AA
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Supplier Device PackagePW-MINI
