MT3S20P(TE12L,F)

MT3S20P(TE12L,F)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 12V 7GHZ PW-MINI

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    7GHz
  • Noise Figure (dB Typ @ f)
    1.45dB @ 1GHz
  • Gain
    16.5dB
  • Power - Max
    1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 50mA, 5V
  • Current - Collector (Ic) (Max)
    80mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Supplier Device Package
    PW-MINI

MT3S20P(TE12L,F) Request a Quote

In Stock 26889
Quantity:
Unit Price (Reference Price):
0.77000
Target price:
Total:0.77000

Datasheet

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