RN1106MFV,L3F

RN1106MFV,L3F

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS NPN 50V 0.1A VESM

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    NPN - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    4.7 kOhms
  • Resistor - Emitter Base (R2)
    47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 5mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    -
  • Power - Max
    150 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-723
  • Supplier Device Package
    VESM

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In Stock 59819
Quantity:
Unit Price (Reference Price):
0.17000
Target price:
Total:0.17000

Datasheet