RN2426(TE85L,F)

RN2426(TE85L,F)

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS PNP 50V 0.8A SMINI

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    800 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    1 kOhms
  • Resistor - Emitter Base (R2)
    10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    90 @ 100mA, 1V
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 1mA, 50mA
  • Current - Collector Cutoff (Max)
    500nA
  • Frequency - Transition
    200 MHz
  • Power - Max
    200 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    S-Mini

RN2426(TE85L,F) Request a Quote

In Stock 25329
Quantity:
Unit Price (Reference Price):
0.41000
Target price:
Total:0.41000