SSM6J501NU,LF

SSM6J501NU,LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 20V 10A 6UDFNB

Specifications

  • Series
    U-MOSVI
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    15.3mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    29.9 nC @ 4.5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    2600 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    1W (Ta)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    6-UDFNB (2x2)
  • Package / Case
    6-WDFN Exposed Pad

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In Stock 39325
Quantity:
Unit Price (Reference Price):
0.52000
Target price:
Total:0.52000

Datasheet