SSM6L35FE,LM

SSM6L35FE,LM

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET N/P-CH 20V 0.18A/0.1A ES6

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    180mA, 100mA
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 50mA, 4V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    -
  • Input Capacitance (Ciss) (Max) @ Vds
    9.5pF @ 3V
  • Power - Max
    150mW
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-563, SOT-666
  • Supplier Device Package
    ES6 (1.6x1.6)

SSM6L35FE,LM Request a Quote

In Stock 24237
Quantity:
Unit Price (Reference Price):
0.43000
Target price:
Total:0.43000

Datasheet