SSM6N61NU,LF

SSM6N61NU,LF

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 20V 4A UDFN

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate, 1.5V Drive
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    4A
  • Rds On (Max) @ Id, Vgs
    33mOhm @ 4A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    3.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    410pF @ 10V
  • Power - Max
    2W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-WDFN Exposed Pad
  • Supplier Device Package
    6-UDFNB (2x2)

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In Stock 61396
Quantity:
Unit Price (Reference Price):
0.16539
Target price:
Total:0.16539

Datasheet