TK3P50D,RQ(S

TK3P50D,RQ(S

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 500V 3A DPAK

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    500 V
  • Current - Continuous Drain (Id) @ 25°C
    3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    3Ohm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    4.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    7 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    280 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    60W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    DPAK
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 39337
Quantity:
Unit Price (Reference Price):
0.52052
Target price:
Total:0.52052

Datasheet