TK6Q65W,S1Q

TK6Q65W,S1Q

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 5.8A IPAK

Specifications

  • Series
    DTMOSIV
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    1.05Ohm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs
    11 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    390 pF @ 300 V
  • FET Feature
    -
  • Power Dissipation (Max)
    60W (Tc)
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    I-PAK
  • Package / Case
    TO-251-3 Stub Leads, IPak

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In Stock 18547
Quantity:
Unit Price (Reference Price):
1.13040
Target price:
Total:1.13040

Datasheet