Specifications

• Series
  -
• Package
  Tray
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)
  650 V
• Current - Continuous Drain (Id) @ 25°C
  6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  8V
• Rds On (Max) @ Id, Vgs
  312mOhm @ 5A, 8V
• Vgs(th) (Max) @ Id
  2.6V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs
  9.6 nC @ 8 V
• Vgs (Max)
  ±18V
• Input Capacitance (Ciss) (Max) @ Vds
  760 pF @ 400 V
• FET Feature
  -
• Power Dissipation (Max)
  21W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  3-PQFN (8x8)
• Package / Case
  3-PowerDFN