Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Obsolete
• FET Type
  2 N-Channel (Half Bridge)
• FET Feature
  GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss)
  600V
• Current - Continuous Drain (Id) @ 25°C
  70A (Tc)
• Rds On (Max) @ Id, Vgs
  34mOhm @ 30A, 8V
• Vgs(th) (Max) @ Id
  -
• Gate Charge (Qg) (Max) @ Vgs
  28nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds
  2260pF @ 100V
• Power - Max
  470W
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Package / Case
  Module
• Supplier Device Package
  Module