SI1926DL-T1-GE3

SI1926DL-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 60V 0.37A SOT363

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    370mA
  • Rds On (Max) @ Id, Vgs
    1.4Ohm @ 340mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    18.5pF @ 30V
  • Power - Max
    510mW
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    SC-70-6 (SOT-363)

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In Stock 24066
Quantity:
Unit Price (Reference Price):
0.43000
Target price:
Total:0.43000

Datasheet