SI4922BDY-T1-GE3

SI4922BDY-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 30V 8A 8-SOIC

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    8A
  • Rds On (Max) @ Id, Vgs
    16mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    62nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    2070pF @ 15V
  • Power - Max
    3.1W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SO

SI4922BDY-T1-GE3 Request a Quote

In Stock 12437
Quantity:
Unit Price (Reference Price):
1.72000
Target price:
Total:1.72000

Datasheet