SI6466ADQ-T1-GE3

SI6466ADQ-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 20V 6.8A 8TSSOP

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)
  • Part Status
    Obsolete
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    6.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    14mOhm @ 8.1A, 4.5V
  • Vgs(th) (Max) @ Id
    450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs
    27 nC @ 5 V
  • Vgs (Max)
    ±8V
  • Input Capacitance (Ciss) (Max) @ Vds
    -
  • FET Feature
    -
  • Power Dissipation (Max)
    1.05W (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    8-TSSOP
  • Package / Case
    8-TSSOP (0.173", 4.40mm Width)

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Datasheet