SI6562CDQ-T1-GE3

SI6562CDQ-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET N/P-CH 20V 6.7A 8-TSSOP

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N and P-Channel
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    6.7A, 6.1A
  • Rds On (Max) @ Id, Vgs
    22mOhm @ 5.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    850pF @ 10V
  • Power - Max
    1.6W, 1.7W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package
    8-TSSOP

SI6562CDQ-T1-GE3 Request a Quote

In Stock 19576
Quantity:
Unit Price (Reference Price):
1.07000
Target price:
Total:1.07000

Datasheet