SI7980DP-T1-GE3

SI7980DP-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 20V 8A PPAK SO-8

Specifications

  • Series
    TrenchFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Obsolete
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    8A
  • Rds On (Max) @ Id, Vgs
    22mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1010pF @ 10V
  • Power - Max
    19.8W, 21.9W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SO-8 Dual
  • Supplier Device Package
    PowerPAK® SO-8 Dual

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In Stock 19984
Quantity:
Unit Price (Reference Price):
1.05000
Target price:
Total:1.05000

Datasheet