SIA938DJT-T1-GE3

SIA938DJT-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

DUAL N-CHANNEL 20-V (D-S) MOSFET

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    20V
  • Current - Continuous Drain (Id) @ 25°C
    4.5A (Ta), 4.5A (Tc)
  • Rds On (Max) @ Id, Vgs
    21.5mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    11.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    425pF @ 10V
  • Power - Max
    1.9W (Ta), 7.8W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® SC-70-6 Dual
  • Supplier Device Package
    PowerPAK® SC-70-6 Dual

SIA938DJT-T1-GE3 Request a Quote

In Stock 29377
Quantity:
Unit Price (Reference Price):
0.70000
Target price:
Total:0.70000