SIHG105N60EF-GE3

SIHG105N60EF-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 29A TO247AC

Specifications

  • Series
    EF
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    102mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    53 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1804 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    208W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-247AC
  • Package / Case
    TO-247-3

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In Stock 7464
Quantity:
Unit Price (Reference Price):
4.53000
Target price:
Total:4.53000