SIHG16N50C-E3

SIHG16N50C-E3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 500V 16A TO247AC

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    500 V
  • Current - Continuous Drain (Id) @ 25°C
    16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    380mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    68 nC @ 10 V
  • Vgs (Max)
    ±30V
  • Input Capacitance (Ciss) (Max) @ Vds
    1900 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    250W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-247AC
  • Package / Case
    TO-247-3

SIHG16N50C-E3 Request a Quote

In Stock 7101
Quantity:
Unit Price (Reference Price):
4.81000
Target price:
Total:4.81000

Datasheet