SISF20DN-T1-GE3

SISF20DN-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET DL N-CH 60V PPK 1212-8SCD

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    14A (Ta), 52A (Tc)
  • Rds On (Max) @ Id, Vgs
    13mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1290pF @ 30V
  • Power - Max
    5.2W (Ta), 69.4W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    PowerPAK® 1212-8SCD
  • Supplier Device Package
    PowerPAK® 1212-8SCD

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In Stock 12836
Quantity:
Unit Price (Reference Price):
1.67000
Target price:
Total:1.67000