SISS80DN-T1-GE3

SISS80DN-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 20V 58.3A/210A PPAK

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    58.3A (Ta), 210A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 10V
  • Rds On (Max) @ Id, Vgs
    0.92mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    122 nC @ 10 V
  • Vgs (Max)
    +12V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds
    6450 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    5W (Ta), 65W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PowerPAK® 1212-8S
  • Package / Case
    PowerPAK® 1212-8S

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In Stock 12415
Quantity:
Unit Price (Reference Price):
1.75000
Target price:
Total:1.75000