SIZF906BDT-T1-GE3

SIZF906BDT-T1-GE3

Manufacturer

Vishay / Siliconix

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

DUAL N-CHANNEL 30 V (D-S) MOSFET

Specifications

  • Series
    TrenchFET® Gen IV
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual), Schottky
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
  • Rds On (Max) @ Id, Vgs
    2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    49nC @ 10V, 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1630pF @ 15V, 5550pF @ 15V
  • Power - Max
    4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerWDFN
  • Supplier Device Package
    8-PowerPair® (6x5)

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In Stock 12461
Quantity:
Unit Price (Reference Price):
1.73000
Target price:
Total:1.73000