Specifications

• Series
  C2M™
• Package
  Tube
• Part Status
  Not For New Designs
• FET Type
  N-Channel
• Technology
  SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss)
  1700 V
• Current - Continuous Drain (Id) @ 25°C
  72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  20V
• Rds On (Max) @ Id, Vgs
  59mOhm @ 50A, 20V
• Vgs(th) (Max) @ Id
  4V @ 18mA
• Gate Charge (Qg) (Max) @ Vgs
  188 nC @ 20 V
• Vgs (Max)
  +25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds
  3672 pF @ 1000 V
• FET Feature
  -
• Power Dissipation (Max)
  520W (Tc)
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-247-4
• Package / Case
  TO-247-4