Specifications

• Series
  Z-Rec®
• Package
  Tray
• Part Status
  Not For New Designs
• FET Type
  6 N-Channel (3-Phase Bridge)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  29.5A (Tc)
• Rds On (Max) @ Id, Vgs
  98mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id
  2.2V @ 1mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs
  61.5nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds
  900pF @ 800V
• Power - Max
  167W
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module
• Supplier Device Package
  Module