FZ800R33KF2CS1NDSA1

FZ800R33KF2CS1NDSA1

Manufacturer

Rochester Electronics

Product Category

Transistors - IGBTs - Modules

Description

INSULATED GATE BIPOLAR TRANSISTO

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    3.3 V
  • Current - Collector (Ic) (Max)
    1 A
  • Power - Max
    9.6 W
  • Vce(on) (Max) @ Vge, Ic
    4.25V @ 15V, 800A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    100 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 125°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    -

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In Stock 1003
Quantity:
Unit Price (Reference Price):
1240.62000
Target price:
Total:1240.62000